SURFACE INTERFACE ONTARIO

"CREATING PARTNERSHIPS FOR INNOVATIVE RESEARCH"

Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS)

Instruments

ION-TOF TOF-SIMS IV

  • Multiple Ion Sources – 3 Columns
    • Liquid metal ion gun (Bin) – rapid submicron imaging; cluster (to Bi7) – enhances fragmentation and yield
    • C60 source – enhances fragmentation and yield, shallow and molecular depth profiling
    • High current Cs+ ion gun allows for shallow depth profiling and optimal trace analysis of -ve ions
    • Electron impact (EI) gas ion source - O2, Ar and SF6

  • Dual Beam Depth Profiling – Cs/EI/C60 for sputtering, Bi for spectral acquisition
  • Pulsed secondary electron detector – allows SEM on insulators
  • Variable Temperature (-150°C to 600°C)
  • Effective charge compensation
  • O2 gas flood to increase +ve ion yield
  • Computer control – for analysis, + off-line for work-up
  • Preparation / sample treatment chamber

Custom Preparation Chamber

  • Versatile configuration for custom set-up
  • Port for vacuum/cryo transfer “suitcase”
  • Ports for other transfer modules/auxillary reaction chambers (vertical or horizontal samples, compatibility with a variety of mount designs)
  • Internal bake-out - rapid UHV recovery
  • Heating/cooling of sample (-150°C to 600°C)

 

 


PREPARATION/SAMPLE TREATMENT CHAMBER